Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes

Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes

The noise performance of three types of n<sup>&#x002B;</sup>&#x002F;p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD...

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Bibliographic Details
Main Authors: Wei Jiang, Ryan Scott, M. Jamal Deen
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Photonics Journal
Subjects:
Single photon avalanche diode (SPAD)
guard ring
poly gate
dark count rate (DCR)
afterpulsing (AP)
Online Access:https://ieeexplore.ieee.org/document/9614995/

Internet

https://ieeexplore.ieee.org/document/9614995/

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