Origin of ultralow thermal conductivity in amorphous Si thin films investigated using nanoindentation, 3ω method, and phonon transport analysis
The origin of the ultralow thermal conductivity in amorphous Si thin films was investigated by comparing their phonon transport properties with those of single-crystal Si. The group velocity and thermal conductivity were measured at 300 K using nanoindentation and the 3 ω method, respectively. The p...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
|
| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ad0ba3 |