Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics
Monolithic GaN High Electron Mobility Transistor (HEMT)-integrated circuits are a promising application of wide band-gap materials. To date, most GaN-based devices behave as NMOS-like transistors. As only NMOS GaN HEMT is currently commercially available, its control circuit requires special design...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/11/24/12057 |