InGaN-LD-Pumped <inline-formula> <tex-math notation="TeX">${\rm Pr}^{3+}$</tex-math></inline-formula>: <inline-formula> <tex-math notation="TeX">${\rm LiYF}_{4}$</tex-math></inline-formula> Continuous-Wave Laser at 915 nm
We demonstrate the first InGaN-LD-pumped room temperature and continuous-wave laser operation of a Pr<sup>3+</sup>: LiYF<sub>4</sub> crystal at 915 nm. A maximum output power up to 78 mW with a laser slope efficiency of about 17% is obtained. The round-trip optical losses are...
Autors principals: | , , , , , , , , , |
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Format: | Article |
Idioma: | English |
Publicat: |
IEEE
2014-01-01
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Col·lecció: | IEEE Photonics Journal |
Matèries: | |
Accés en línia: | https://ieeexplore.ieee.org/document/6977881/ |