InGaN-LD-Pumped <inline-formula> <tex-math notation="TeX">${\rm Pr}^{3+}$</tex-math></inline-formula>: <inline-formula> <tex-math notation="TeX">${\rm LiYF}_{4}$</tex-math></inline-formula> Continuous-Wave Laser at 915 nm

We demonstrate the first InGaN-LD-pumped room temperature and continuous-wave laser operation of a Pr<sup>3+</sup>: LiYF<sub>4</sub> crystal at 915 nm. A maximum output power up to 78 mW with a laser slope efficiency of about 17% is obtained. The round-trip optical losses are...

Descripció completa

Dades bibliogràfiques
Autors principals: Biao Qu, Bin Xu, Yongjie Cheng, Saiyu Luo, Huiying Xu, Yikun Bu, Patrice Camy, Jean-Louis Doualan, Richard Moncorge, Zhiping Cai
Format: Article
Idioma:English
Publicat: IEEE 2014-01-01
Col·lecció:IEEE Photonics Journal
Matèries:
Accés en línia:https://ieeexplore.ieee.org/document/6977881/