Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic

A Ga-Sn-O (GTO) thin-film memristor has been developed, and an analog plasticity characteristic has been observed. First, GTO thin-film memristors are fabricated by depositing three GTO layers in a stacked structure using sputtering. Next, the current-voltage characteristics are measured by varying...

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Bibliographic Details
Main Authors: Daisuke Makioka, Shu Shiomi, Mutsumi Kimura
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10061611/