Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic
A Ga-Sn-O (GTO) thin-film memristor has been developed, and an analog plasticity characteristic has been observed. First, GTO thin-film memristors are fabricated by depositing three GTO layers in a stacked structure using sputtering. Next, the current-voltage characteristics are measured by varying...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10061611/ |