Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic
A Ga-Sn-O (GTO) thin-film memristor has been developed, and an analog plasticity characteristic has been observed. First, GTO thin-film memristors are fabricated by depositing three GTO layers in a stacked structure using sputtering. Next, the current-voltage characteristics are measured by varying...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10061611/ |
| _version_ | 1797870063352545280 |
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| author | Daisuke Makioka Shu Shiomi Mutsumi Kimura |
| author_facet | Daisuke Makioka Shu Shiomi Mutsumi Kimura |
| author_sort | Daisuke Makioka |
| collection | DOAJ |
| description | A Ga-Sn-O (GTO) thin-film memristor has been developed, and an analog plasticity characteristic has been observed. First, GTO thin-film memristors are fabricated by depositing three GTO layers in a stacked structure using sputtering. Next, the current-voltage characteristics are measured by varying the maximum applied voltage after a certain negative voltage, the hysteresis is observed, and the switching characteristics are evaluated, which is regarded as that an analog plasticity characteristic is observed. The parametric study is done for the stacked structure and deposition process, and the proposed operating mechanism is that oxygen vacancies reciprocate by applying negative and positive voltages. Finally, the pulse application characteristic shows the long-term potentiation and depression, which presents a practical possibility to utilize the GTO thin-film memristor for neuromorphic systems. |
| first_indexed | 2024-04-10T00:21:23Z |
| format | Article |
| id | doaj.art-c3ea470ab809492bb550db33e0803c0f |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-10T00:21:23Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-c3ea470ab809492bb550db33e0803c0f2023-03-15T23:00:10ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-011117417810.1109/JEDS.2023.325346510061611Ga-Sn-O Thin-Film Memristor and Analog Plasticity CharacteristicDaisuke Makioka0Shu Shiomi1Mutsumi Kimura2https://orcid.org/0000-0001-5379-5597Faculty of Advanced Science and Technology, Ryukoku University, Otsu, JapanFaculty of Advanced Science and Technology, Ryukoku University, Otsu, JapanFaculty of Advanced Science and Technology, Ryukoku University, Otsu, JapanA Ga-Sn-O (GTO) thin-film memristor has been developed, and an analog plasticity characteristic has been observed. First, GTO thin-film memristors are fabricated by depositing three GTO layers in a stacked structure using sputtering. Next, the current-voltage characteristics are measured by varying the maximum applied voltage after a certain negative voltage, the hysteresis is observed, and the switching characteristics are evaluated, which is regarded as that an analog plasticity characteristic is observed. The parametric study is done for the stacked structure and deposition process, and the proposed operating mechanism is that oxygen vacancies reciprocate by applying negative and positive voltages. Finally, the pulse application characteristic shows the long-term potentiation and depression, which presents a practical possibility to utilize the GTO thin-film memristor for neuromorphic systems.https://ieeexplore.ieee.org/document/10061611/Ga-Sn-O (GTO)thin-film memristoranalog plasticitysynapse elementneuromorphic system |
| spellingShingle | Daisuke Makioka Shu Shiomi Mutsumi Kimura Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic IEEE Journal of the Electron Devices Society Ga-Sn-O (GTO) thin-film memristor analog plasticity synapse element neuromorphic system |
| title | Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic |
| title_full | Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic |
| title_fullStr | Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic |
| title_full_unstemmed | Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic |
| title_short | Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic |
| title_sort | ga sn o thin film memristor and analog plasticity characteristic |
| topic | Ga-Sn-O (GTO) thin-film memristor analog plasticity synapse element neuromorphic system |
| url | https://ieeexplore.ieee.org/document/10061611/ |
| work_keys_str_mv | AT daisukemakioka gasnothinfilmmemristorandanalogplasticitycharacteristic AT shushiomi gasnothinfilmmemristorandanalogplasticitycharacteristic AT mutsumikimura gasnothinfilmmemristorandanalogplasticitycharacteristic |