Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper

Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper

Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150‐nm gate structure was successfully realized with the init...

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Bibliographic Details
Main Authors: Yuji Ando, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, Jun Suda
Format: Article
Language:English
Published: Wiley 2021-11-01
Series:Electronics Letters
Subjects:
Other field effect devices
Lithography (semiconductor technology)
Online Access:https://doi.org/10.1049/ell2.12303

Internet

https://doi.org/10.1049/ell2.12303

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