Design of Low Inductance SiC-MOS/Si-IGBT Hybrid Module for PV Inverters

Design of Low Inductance SiC-MOS/Si-IGBT Hybrid Module for PV Inverters

In this paper, design of a low parasitic inductance T-type SiC-MOS/Si-IGBT hybrid module for PV inverters is studied. Current commutation loops and self- and mutual inductances model of the hybrid module are analyzed. Then stacked substrates structures with vertical power commutation loop...

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Bibliographic Details
Main Authors: Ye Wang, Min Chen, Dehong Xu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Hybrid module
stacked bond wire substrates
parasitic inductance
inverter
Online Access:https://ieeexplore.ieee.org/document/9961883/

Internet

https://ieeexplore.ieee.org/document/9961883/

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