Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection
Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-02-01
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| Series: | Biosensors |
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| Online Access: | https://www.mdpi.com/2079-6374/12/2/115 |
| _version_ | 1797482229160476672 |
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| author | Chi-Chang Wu |
| author_facet | Chi-Chang Wu |
| author_sort | Chi-Chang Wu |
| collection | DOAJ |
| description | Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire length and number with biomolecule detection. The experimental results revealed that the sensor with a 3 µm nanowire exhibited high sensitivity in detecting low concentrations of HBsAg. However, the sensor reached saturation when the biomolecule concentration exceeded 800 fg/mL. Sensors with 1.6 and 5 µm nanowires exhibited favorable linear sensing ranges at concentrations from 800 ag/mL to 800 pg/mL. The results regarding the number of nanowires revealed that the use of few nanowires in transistor sensors increases sensitivity. The results demonstrate the effects of nanowire dimensions on the silicon NWFET biosensors. |
| first_indexed | 2024-03-09T22:28:18Z |
| format | Article |
| id | doaj.art-c417196294f9429d8f80539c8d2947b9 |
| institution | Directory Open Access Journal |
| issn | 2079-6374 |
| language | English |
| last_indexed | 2024-03-09T22:28:18Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Biosensors |
| spelling | doaj.art-c417196294f9429d8f80539c8d2947b92023-11-23T19:01:34ZengMDPI AGBiosensors2079-63742022-02-0112211510.3390/bios12020115Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen DetectionChi-Chang Wu0Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 411030, TaiwanSilicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire length and number with biomolecule detection. The experimental results revealed that the sensor with a 3 µm nanowire exhibited high sensitivity in detecting low concentrations of HBsAg. However, the sensor reached saturation when the biomolecule concentration exceeded 800 fg/mL. Sensors with 1.6 and 5 µm nanowires exhibited favorable linear sensing ranges at concentrations from 800 ag/mL to 800 pg/mL. The results regarding the number of nanowires revealed that the use of few nanowires in transistor sensors increases sensitivity. The results demonstrate the effects of nanowire dimensions on the silicon NWFET biosensors.https://www.mdpi.com/2079-6374/12/2/115silicon nanowireNWFETHepatitis B surface antigenHBsAgsensitivity |
| spellingShingle | Chi-Chang Wu Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection Biosensors silicon nanowire NWFET Hepatitis B surface antigen HBsAg sensitivity |
| title | Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection |
| title_full | Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection |
| title_fullStr | Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection |
| title_full_unstemmed | Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection |
| title_short | Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection |
| title_sort | silicon nanowires length and numbers dependence on sensitivity of the field effect transistor sensor for hepatitis b virus surface antigen detection |
| topic | silicon nanowire NWFET Hepatitis B surface antigen HBsAg sensitivity |
| url | https://www.mdpi.com/2079-6374/12/2/115 |
| work_keys_str_mv | AT chichangwu siliconnanowireslengthandnumbersdependenceonsensitivityofthefieldeffecttransistorsensorforhepatitisbvirussurfaceantigendetection |