Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection
Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon...
Main Author: | Chi-Chang Wu |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-02-01
|
Series: | Biosensors |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-6374/12/2/115 |
Similar Items
-
Seroprevalence of hepatitis B surface antigen and its correlation with risk factors among new recruits in Turkey
by: Tulin Altay, et al. -
Analytical Performance of the Sysmex HISCL HBsAg Assay and Comparison with the Roche Elecsys HBsAg II Quant Assay in the Quantification of Hepatitis B Surface Antigen
by: Joonhong Park, et al.
Published: (2021-11-01) -
Unexpected rise in the circulation of complex HBV variants enriched of HBsAg vaccine-escape mutations in HBV genotype-D: potential impact on HBsAg detection/quantification and vaccination strategies
by: Lorenzo Piermatteo, et al.
Published: (2023-12-01) -
Age-wise and Gender-wise Prevalence of Hepatitis B Virus (HBV) Infection in Lahore, Pakistan
by: Aqib Nazeer, et al.
Published: (2019-12-01) -
Accuracy Validation of the Elecsys HBsAg II Quant Assay and Its Utility in Resolving Equivocal Qualitative HBsAg Results
by: Jaehyeon Lee, et al.
Published: (2023-02-01)