Enhanced electrical properties of Nb-doped a-HfO2 dielectric films for MIM capacitors
We report enhanced electrical properties of metal–insulator–metal (MIM) capacitors consisting of Al (100 nm)/Nb-doped a-HfO2 (∼30 nm)/Pt (100 nm) on a p-type silicon wafer, where Nb-doped amorphous HfO2 (a-HfO2) layers were deposited by radio frequency magnetron sputtering in various low oxygen part...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0024783 |