Enhanced electrical properties of Nb-doped a-HfO2 dielectric films for MIM capacitors

Enhanced electrical properties of Nb-doped a-HfO2 dielectric films for MIM capacitors

We report enhanced electrical properties of metal–insulator–metal (MIM) capacitors consisting of Al (100 nm)/Nb-doped a-HfO2 (∼30 nm)/Pt (100 nm) on a p-type silicon wafer, where Nb-doped amorphous HfO2 (a-HfO2) layers were deposited by radio frequency magnetron sputtering in various low oxygen part...

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Bibliographic Details
Main Authors:	Chris Yeajoon Bon, Dami Kim, Kanghyuk Lee, Sungjoon Choi, Insung Park, Sang-Im Yoo
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2020-11-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0024783

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