Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness

Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness

Optical properties of wurtzite violet InGaN/GaN quantum well (QW) structures, with the same well-plus-barrier thickness, grown by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates, were investigated using temperature-dependent photoluminescence (TDPL) and excitation-powe...

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Bibliographic Details
Main Authors: Huan Xu, Xin Hou, Lan Chen, Yang Mei, Baoping Zhang
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Crystals
Subjects:
InGaN/GaN multiple quantum wells
localization states well thickness
barrier thickness
photoluminescence
Online Access:https://www.mdpi.com/2073-4352/12/1/114

Internet

https://www.mdpi.com/2073-4352/12/1/114

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