Spin-valley system in a gated MoS2-monolayer quantum dot
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS _2 monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement potential and force intervalley transitions. The present Rashba sp...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2019-01-01
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| Series: | New Journal of Physics |
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| Online Access: | https://doi.org/10.1088/1367-2630/ab5ac9 |