Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors
Low-frequency noise (LFN) is investigated in a set of indium-zinc-oxide thin-film transistors (IZO TFTs) with fixed channel width (W = 10 μm) and different channel lengths (L = 10, 20, 30, and 40 μm) from sub-threshold, linear to saturation regions. The drain current noise powe...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8277184/ |