Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors

Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors

Low-frequency noise (LFN) is investigated in a set of indium-zinc-oxide thin-film transistors (IZO TFTs) with fixed channel width (W = 10 μm) and different channel lengths (L = 10, 20, 30, and 40 μm) from sub-threshold, linear to saturation regions. The drain current noise powe...

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Bibliographic Details
Main Authors: Yuan Liu, Hongyu He, Rongsheng Chen, Yun-Fei En, Bin Li, Yi-Qiang Chen
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Indium-zinc-oxide
thin film transistor
low frequency noise
BSIM
Online Access:https://ieeexplore.ieee.org/document/8277184/

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