Optimization of linear cell 4H-SiC power JBSFETs: Impact of N+ source contact resistance
SiC JBSFETs are fabricated using low contact anneal temperature to simultaneously form the ohmic contact to the N+ source region and a Schottky contact at the JBS diode. It is demonstrated in this paper that a larger N+ source contact width can substantially improve the on-resistance and figures-of-...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-06-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370422000050 |