P-type silicon as hole supplier for nitride-based UVC LEDs

P-type silicon as hole supplier for nitride-based UVC LEDs

The ineffective p-type doping of nitrides using magnesium (Mg), the best available dopant, has limited the development and performance of all III-nitride-based devices, including bipolar junction transistors and light emitting diodes (LEDs). For nitride-based ultraviolet (UV) LEDs, as the Al composi...

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Bibliographic Details
Main Authors: Sang June Cho, Dong Liu, Jung-Hun Seo, Rafael Dalmau, Kwangeun Kim, Jeongpil Park, Jiarui Gong, Deyin Zhao, Fei Wang, Xin Yin, Yei Hwan Jung, In-Kyu Lee, Munho Kim, Xudong Wang, John D. Albrecht, Weidong Zhou, Baxter Moody, Zhenqiang Ma
Format: Article
Language:English
Published: IOP Publishing 2019-01-01
Series:New Journal of Physics
Subjects:
tunneling
single crystal nanomembrane
atomic layer deposition
transfer printing
hole injector
light emitting diodes
Online Access:https://doi.org/10.1088/1367-2630/ab0445

Internet

https://doi.org/10.1088/1367-2630/ab0445

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