Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)
InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si substrate. The surface morphology and microst...
| मुख्य लेखकों: | , , , |
|---|---|
| स्वरूप: | लेख |
| भाषा: | English |
| प्रकाशित: |
MDPI AG
2022-03-01
|
| श्रृंखला: | Crystals |
| विषय: | |
| ऑनलाइन पहुंच: | https://www.mdpi.com/2073-4352/12/4/462 |