Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)
InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si substrate. The surface morphology and microst...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-03-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/4/462 |
| Summary: | InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si substrate. The surface morphology and microstructure were investigated by using an atomic force microscope (AFM) and transmission electron microscopy (TEM). High-resolution X-ray diffraction (HR-XRD) measurements were carried out to characterize the crystal quality. It was found that a too thin nucleation layer will lead to an uneven distribution of atoms on the surface, resulting in a poor crystalline quality of the InP epitaxial layer. The thicker the low-temperature nucleation layer is, the better the crystallization quality of the InP high-temperature layer will be. |
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| ISSN: | 2073-4352 |