Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)
InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si substrate. The surface morphology and microst...
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| Materiálatiipa: | Artihkal |
| Giella: | English |
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MDPI AG
2022-03-01
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| Ráidu: | Crystals |
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| Liŋkkat: | https://www.mdpi.com/2073-4352/12/4/462 |
| _version_ | 1827621217449803776 |
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| author | Silu Yan Hongliang Lv Yuming Zhang Shizheng Yang |
| author_facet | Silu Yan Hongliang Lv Yuming Zhang Shizheng Yang |
| author_sort | Silu Yan |
| collection | DOAJ |
| description | InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si substrate. The surface morphology and microstructure were investigated by using an atomic force microscope (AFM) and transmission electron microscopy (TEM). High-resolution X-ray diffraction (HR-XRD) measurements were carried out to characterize the crystal quality. It was found that a too thin nucleation layer will lead to an uneven distribution of atoms on the surface, resulting in a poor crystalline quality of the InP epitaxial layer. The thicker the low-temperature nucleation layer is, the better the crystallization quality of the InP high-temperature layer will be. |
| first_indexed | 2024-03-09T10:59:33Z |
| format | Article |
| id | doaj.art-c53871a60dcb4eb39a18e3744a950efb |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T10:59:33Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-c53871a60dcb4eb39a18e3744a950efb2023-12-01T01:23:40ZengMDPI AGCrystals2073-43522022-03-0112446210.3390/cryst12040462Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)Silu Yan0Hongliang Lv1Yuming Zhang2Shizheng Yang3The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaThe State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaThe State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaChina Electronic Product Reliability and Environment Testing Research Institute, Guangzhou 511370, ChinaInP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si substrate. The surface morphology and microstructure were investigated by using an atomic force microscope (AFM) and transmission electron microscopy (TEM). High-resolution X-ray diffraction (HR-XRD) measurements were carried out to characterize the crystal quality. It was found that a too thin nucleation layer will lead to an uneven distribution of atoms on the surface, resulting in a poor crystalline quality of the InP epitaxial layer. The thicker the low-temperature nucleation layer is, the better the crystallization quality of the InP high-temperature layer will be.https://www.mdpi.com/2073-4352/12/4/462InP on Sitwo-step growth methodnucleation layerthickness |
| spellingShingle | Silu Yan Hongliang Lv Yuming Zhang Shizheng Yang Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001) Crystals InP on Si two-step growth method nucleation layer thickness |
| title | Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001) |
| title_full | Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001) |
| title_fullStr | Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001) |
| title_full_unstemmed | Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001) |
| title_short | Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001) |
| title_sort | effect of thickness of inp nucleation layer on the two step growth of inp on si 001 |
| topic | InP on Si two-step growth method nucleation layer thickness |
| url | https://www.mdpi.com/2073-4352/12/4/462 |
| work_keys_str_mv | AT siluyan effectofthicknessofinpnucleationlayeronthetwostepgrowthofinponsi001 AT honglianglv effectofthicknessofinpnucleationlayeronthetwostepgrowthofinponsi001 AT yumingzhang effectofthicknessofinpnucleationlayeronthetwostepgrowthofinponsi001 AT shizhengyang effectofthicknessofinpnucleationlayeronthetwostepgrowthofinponsi001 |