Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction
Coherent x-ray diffractive imaging is a powerful technique for determining strain on the nanometer scale. Here, it is used to image semiconducting GaAs1-yNy structures on a GaAs substrate and to measure strain, demonstrating its potential for studying highly strained interfaces in devices.
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2020-04-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-020-0021-6 |