Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction

Coherent x-ray diffractive imaging is a powerful technique for determining strain on the nanometer scale. Here, it is used to image semiconducting GaAs1-yNy structures on a GaAs substrate and to measure strain, demonstrating its potential for studying highly strained interfaces in devices.

Bibliographic Details
Main Authors: Felisa Berenguer, Giorgio Pettinari, Marco Felici, Nilanthy Balakrishnan, Jesse N. Clark, Sylvain Ravy, Amalia Patané, Antonio Polimeni, Gianluca Ciatto
Format: Article
Language:English
Published: Nature Portfolio 2020-04-01
Series:Communications Materials
Online Access:https://doi.org/10.1038/s43246-020-0021-6
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author Felisa Berenguer
Giorgio Pettinari
Marco Felici
Nilanthy Balakrishnan
Jesse N. Clark
Sylvain Ravy
Amalia Patané
Antonio Polimeni
Gianluca Ciatto
author_facet Felisa Berenguer
Giorgio Pettinari
Marco Felici
Nilanthy Balakrishnan
Jesse N. Clark
Sylvain Ravy
Amalia Patané
Antonio Polimeni
Gianluca Ciatto
author_sort Felisa Berenguer
collection DOAJ
description Coherent x-ray diffractive imaging is a powerful technique for determining strain on the nanometer scale. Here, it is used to image semiconducting GaAs1-yNy structures on a GaAs substrate and to measure strain, demonstrating its potential for studying highly strained interfaces in devices.
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spelling doaj.art-c552cf1d1c2e495d85ef0e75514ebf382022-12-21T23:09:52ZengNature PortfolioCommunications Materials2662-44432020-04-01111810.1038/s43246-020-0021-6Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffractionFelisa Berenguer0Giorgio Pettinari1Marco Felici2Nilanthy Balakrishnan3Jesse N. Clark4Sylvain Ravy5Amalia Patané6Antonio Polimeni7Gianluca Ciatto8Synchrotron SOLEIL, L’Orme des MerisiersCNR, Institute for Photonics and NanotechnologiesDepartment of Physics, Sapienza Università di RomaSchool of Physics and Astronomy, University of NottinghamStanford PULSE Institute, SLAC National Accelerator LaboratorySynchrotron SOLEIL, L’Orme des MerisiersSchool of Physics and Astronomy, University of NottinghamDepartment of Physics, Sapienza Università di RomaSynchrotron SOLEIL, L’Orme des MerisiersCoherent x-ray diffractive imaging is a powerful technique for determining strain on the nanometer scale. Here, it is used to image semiconducting GaAs1-yNy structures on a GaAs substrate and to measure strain, demonstrating its potential for studying highly strained interfaces in devices.https://doi.org/10.1038/s43246-020-0021-6
spellingShingle Felisa Berenguer
Giorgio Pettinari
Marco Felici
Nilanthy Balakrishnan
Jesse N. Clark
Sylvain Ravy
Amalia Patané
Antonio Polimeni
Gianluca Ciatto
Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction
Communications Materials
title Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction
title_full Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction
title_fullStr Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction
title_full_unstemmed Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction
title_short Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction
title_sort imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x ray diffraction
url https://doi.org/10.1038/s43246-020-0021-6
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