Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications

Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications

In this paper, artificial synapses based on four terminal ferroelectric Schottky barrier field effect transistors (FE-SBFETs) are experimentally demonstrated. The ferroelectric polarization switching dynamics gradually modulate the Schottky barriers, thus programming the device conductance by applyi...

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Bibliographic Details
Main Authors: Fengben Xi, Yi Han, Andreas Grenmyr, Detlev Grutzmacher, Qing-Tai Zhao
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ferroelectric polarization
FE-SBFET
HZO
neuromorphic
artificial synapse
Online Access:https://ieeexplore.ieee.org/document/9754707/

Internet

https://ieeexplore.ieee.org/document/9754707/

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