n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ∼396 nm was observed under forward bias. Compared with the...

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Bibliographic Details
Main Authors: Ling Li, Yuantao Zhang, Long Yan, Junyan Jiang, Xu Han, Gaoqiang Deng, Chen Chi, Junfeng Song
Format: Article
Language:English
Published: AIP Publishing LLC 2016-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4971272

Internet

http://dx.doi.org/10.1063/1.4971272

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