Charge-exchange-driven interfacial antiferromagnetic ground state in La0.8Sr0.2MnO3 ultrathin films

The evolution of the magnetic ground state of ultrathin 0–10 unit cells (uc) thick La0.8Sr0.2MnO3 films interfaced to an antiferromagnetic La0.45Sr0.55MnO3/SrTiO3(001) buffer layer was investigated with x-ray photoemission electron microscopy. For 0–3 uc La0.8Sr0.2MnO3, we observe antiferromagnetic...

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Bibliographic Details
Main Authors: G. Panchal, F. Stramaglia, C. A. F. Vaz
Format: Article
Language:English
Published: AIP Publishing LLC 2024-06-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0206368