Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film
A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embed...
| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
AIP Publishing LLC
2016-05-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/1.4948751 |
| _version_ | 1828235621471092736 |
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| author | H. X. Zhu T. Zhang R. X. Wang Y. Y. Zhang L. T. Li X. Y. Qiu |
| author_facet | H. X. Zhu T. Zhang R. X. Wang Y. Y. Zhang L. T. Li X. Y. Qiu |
| author_sort | H. X. Zhu |
| collection | DOAJ |
| description | A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors. |
| first_indexed | 2024-04-12T20:18:34Z |
| format | Article |
| id | doaj.art-c576d1e474d24b44a33c060fa94e3261 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T20:18:34Z |
| publishDate | 2016-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c576d1e474d24b44a33c060fa94e32612022-12-22T03:18:04ZengAIP Publishing LLCAIP Advances2158-32262016-05-0165055004055004-710.1063/1.4948751009605ADVCharge storage and tunneling mechanism of Ni nanocrystals embedded HfOx filmH. X. Zhu0T. Zhang1R. X. Wang2Y. Y. Zhang3L. T. Li4X. Y. Qiu5School of Physical Science and Technology, Southwest University, Chongqing 400715, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing 400715, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing 400715, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing 400715, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing 400715, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing 400715, ChinaA nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.http://dx.doi.org/10.1063/1.4948751 |
| spellingShingle | H. X. Zhu T. Zhang R. X. Wang Y. Y. Zhang L. T. Li X. Y. Qiu Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film AIP Advances |
| title | Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film |
| title_full | Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film |
| title_fullStr | Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film |
| title_full_unstemmed | Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film |
| title_short | Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film |
| title_sort | charge storage and tunneling mechanism of ni nanocrystals embedded hfox film |
| url | http://dx.doi.org/10.1063/1.4948751 |
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