Multi-dimensional models of sic power mosfet for accurately predicting the characteristics

Multi-dimensional models of sic power mosfet for accurately predicting the characteristics

The paper presents a compact simulation program with integrated circuit emphasis (SPICE) model for a 1200V/19A Silicon Carbide power metallic oxide semiconductor field effect transistor (MOSFET). Based on an equivalent circuit topology, the model completely describes the static and dynamic device ch...

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Bibliographic Details
Main Authors: Shen Diao, Hong Chen, Yanhu Chen, Yun Bai, Chengyue Yang, Xinyu Liu, Chengzhan Li, Zhengdong Zhou
Format: Article
Language:English
Published: China Electrotechnical Society 2017-09-01
Series:CES Transactions on Electrical Machines and Systems
Subjects:
dynamic
model
sic mosfet
verilog-a
Online Access:https://ieeexplore.ieee.org/document/8086109

Internet

https://ieeexplore.ieee.org/document/8086109

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