Modeling of the Temperature Profiles and Thermoelectric Effects in Phase Change Memory Cells

Modeling of the Temperature Profiles and Thermoelectric Effects in Phase Change Memory Cells

Phase change memory (PCM) is an important element in the development and realization of new forms of brain-like computing. In this article, a three-dimensional finite element method simulation is carried out to study the temperature profiles within PCM cells for a better understanding of switching o...

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Bibliographic Details
Main Authors: Changcheng Ma, Jing He, Jingjing Lu, Jie Zhu, Zuoqi Hu
Format: Article
Language:English
Published: MDPI AG 2018-07-01
Series:Applied Sciences
Subjects:
phase change memory
finite element modeling
temperature profiles
thermoelectric effects
cooling rates
Online Access:http://www.mdpi.com/2076-3417/8/8/1238

Internet

http://www.mdpi.com/2076-3417/8/8/1238

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