An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN. The flow field of precursors in the chamber of ICP-MOCVD was analyzed and the structure of showerhead was opti...

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Bibliographic Details
Main Authors: Zixuan Zhang, Yi Luo, Jiadong Yu, Xiang Li, Jian Wang, Wangyang Yu, Lai Wang, Zhibiao Hao, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
ICP-MOCVD
low-temperature growth
showerhead structure
flow field
GaN films
Online Access:https://doi.org/10.1088/2053-1591/ac22c5

Internet

https://doi.org/10.1088/2053-1591/ac22c5

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