An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth
An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN. The flow field of precursors in the chamber of ICP-MOCVD was analyzed and the structure of showerhead was opti...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac22c5 |
| _version_ | 1797746836120797184 |
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| author | Zixuan Zhang Yi Luo Jiadong Yu Xiang Li Jian Wang Wangyang Yu Lai Wang Zhibiao Hao Changzheng Sun Yanjun Han Bing Xiong Hongtao Li |
| author_facet | Zixuan Zhang Yi Luo Jiadong Yu Xiang Li Jian Wang Wangyang Yu Lai Wang Zhibiao Hao Changzheng Sun Yanjun Han Bing Xiong Hongtao Li |
| author_sort | Zixuan Zhang |
| collection | DOAJ |
| description | An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN. The flow field of precursors in the chamber of ICP-MOCVD was analyzed and the structure of showerhead was optimized by changing the showerhead diameter to obtain uniform velocity field above the substrate. The thickness non-uniformity of GaN films grown at 600 °C was improved from 5.14% to 1.86% after the optimization of showerhead. On that basis, the influence of triethylgallium (TEG) and trimethylgallium (TMG) on low-temperature GaN growth were investigated and TEG was proved to be the more appropriate Ga source in this case. Finally, GaN film with high c -axis and in-plane orientations was obtained on sputtered AlN/sapphire template and the full width half maximums of (002) and (102) x-ray rocking curves are 0.45° and 0.57° respectively. Our results provide a practicable method for the optimization of low-temperature MOCVD, which has potential to obtain large-scale crystalline films at low temperature. |
| first_indexed | 2024-03-12T15:42:28Z |
| format | Article |
| id | doaj.art-c58f265431b0475e8c1258f112247833 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:42:28Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-c58f265431b0475e8c1258f1122478332023-08-09T15:55:13ZengIOP PublishingMaterials Research Express2053-15912021-01-018909590310.1088/2053-1591/ac22c5An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growthZixuan Zhang0https://orcid.org/0000-0001-9023-3702Yi Luo1Jiadong Yu2Xiang Li3Jian Wang4Wangyang Yu5Lai Wang6Zhibiao Hao7Changzheng Sun8Yanjun Han9Bing Xiong10Hongtao Li11Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaBeijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University , Beijing 100084, People’s Republic of ChinaAn inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN. The flow field of precursors in the chamber of ICP-MOCVD was analyzed and the structure of showerhead was optimized by changing the showerhead diameter to obtain uniform velocity field above the substrate. The thickness non-uniformity of GaN films grown at 600 °C was improved from 5.14% to 1.86% after the optimization of showerhead. On that basis, the influence of triethylgallium (TEG) and trimethylgallium (TMG) on low-temperature GaN growth were investigated and TEG was proved to be the more appropriate Ga source in this case. Finally, GaN film with high c -axis and in-plane orientations was obtained on sputtered AlN/sapphire template and the full width half maximums of (002) and (102) x-ray rocking curves are 0.45° and 0.57° respectively. Our results provide a practicable method for the optimization of low-temperature MOCVD, which has potential to obtain large-scale crystalline films at low temperature.https://doi.org/10.1088/2053-1591/ac22c5ICP-MOCVDlow-temperature growthshowerhead structureflow fieldGaN films |
| spellingShingle | Zixuan Zhang Yi Luo Jiadong Yu Xiang Li Jian Wang Wangyang Yu Lai Wang Zhibiao Hao Changzheng Sun Yanjun Han Bing Xiong Hongtao Li An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth Materials Research Express ICP-MOCVD low-temperature growth showerhead structure flow field GaN films |
| title | An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth |
| title_full | An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth |
| title_fullStr | An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth |
| title_full_unstemmed | An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth |
| title_short | An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth |
| title_sort | inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth |
| topic | ICP-MOCVD low-temperature growth showerhead structure flow field GaN films |
| url | https://doi.org/10.1088/2053-1591/ac22c5 |
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