Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors
The reliability of inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under dc stress and its potential impact on the performance of basic analog amplifiers are investigated. In order to properly reflect the stress effects in various circuit applications, the degradation...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/24/22/7130 |