SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION
With the development of electronic packaging towards high power and high density,the interconnection structure is faced with the reliability problem induced by electromigration. Most traditional simulation methods are based on a single or two physical fields. Herein,a simulation method for obtaining...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Journal of Mechanical Strength
2020-01-01
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| Series: | Jixie qiangdu |
| Subjects: | |
| Online Access: | http://www.jxqd.net.cn/thesisDetails#10.16579/j.issn.1001.9669.2020.03.013 |