Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties
The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in therm...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2024-03-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/22516 |