Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties
The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in therm...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2024-03-01
|
| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/22516 |
| _version_ | 1797272712743223296 |
|---|---|
| author | Rahim Salim Madatov A.S. Alekperov F.N. Nurmammadova Narmin A. Ismayilova Sakin H. Jabarov |
| author_facet | Rahim Salim Madatov A.S. Alekperov F.N. Nurmammadova Narmin A. Ismayilova Sakin H. Jabarov |
| author_sort | Rahim Salim Madatov |
| collection | DOAJ |
| description | The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in thermal annealing structures at T = 200 °C during t = 3 hours occurs due to the decrease in the density of states of local levels located near the Fermi level in the amorphous layer. The mechanism of photosensitivity in an isotype heterostructures was analyzed and it was found that the photosensitivity of the heterojunction increases as a result of a decrease in the surface density of state at the contact boundary of the components, by thermal means. The spectral distribution of the quantum efficiency in the n‑Si – p‑GaSe heterojunction was studied and their perspective was determined. |
| first_indexed | 2024-03-07T14:33:19Z |
| format | Article |
| id | doaj.art-c5b986b0c1c9452793bab7c4aab63a60 |
| institution | Directory Open Access Journal |
| issn | 2312-4334 2312-4539 |
| language | English |
| last_indexed | 2024-03-07T14:33:19Z |
| publishDate | 2024-03-01 |
| publisher | V.N. Karazin Kharkiv National University Publishing |
| record_format | Article |
| series | East European Journal of Physics |
| spelling | doaj.art-c5b986b0c1c9452793bab7c4aab63a602024-03-05T22:41:10ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392024-03-01132232610.26565/2312-4334-2024-1-2922516Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical PropertiesRahim Salim Madatov0A.S. Alekperov1F.N. Nurmammadova2Narmin A. Ismayilova3Sakin H. Jabarov4Institute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, Baku, AzerbaijanAzerbaijan State Pedagogical University, Baku, AzerbaijanBaku Engineering University, Khirdalan, AzerbaijanInstitute of Physics, Ministry of Science and Education Republic of Azerbaijan, Baku, Azerbaijan; Western Caspian University, Baku, AzerbaijanInstitute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, Baku, AzerbaijanThe electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in thermal annealing structures at T = 200 °C during t = 3 hours occurs due to the decrease in the density of states of local levels located near the Fermi level in the amorphous layer. The mechanism of photosensitivity in an isotype heterostructures was analyzed and it was found that the photosensitivity of the heterojunction increases as a result of a decrease in the surface density of state at the contact boundary of the components, by thermal means. The spectral distribution of the quantum efficiency in the n‑Si – p‑GaSe heterojunction was studied and their perspective was determined.https://periodicals.karazin.ua/eejp/article/view/22516gasethin filmheterojunctionelectrophysical properties |
| spellingShingle | Rahim Salim Madatov A.S. Alekperov F.N. Nurmammadova Narmin A. Ismayilova Sakin H. Jabarov Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties East European Journal of Physics gase thin film heterojunction electrophysical properties |
| title | Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties |
| title_full | Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties |
| title_fullStr | Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties |
| title_full_unstemmed | Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties |
| title_short | Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties |
| title_sort | preparation of n si p gase heterojunctions based on an amorphous gase layer without impurities and study of their electrical properties |
| topic | gase thin film heterojunction electrophysical properties |
| url | https://periodicals.karazin.ua/eejp/article/view/22516 |
| work_keys_str_mv | AT rahimsalimmadatov preparationofnsipgaseheterojunctionsbasedonanamorphousgaselayerwithoutimpuritiesandstudyoftheirelectricalproperties AT asalekperov preparationofnsipgaseheterojunctionsbasedonanamorphousgaselayerwithoutimpuritiesandstudyoftheirelectricalproperties AT fnnurmammadova preparationofnsipgaseheterojunctionsbasedonanamorphousgaselayerwithoutimpuritiesandstudyoftheirelectricalproperties AT narminaismayilova preparationofnsipgaseheterojunctionsbasedonanamorphousgaselayerwithoutimpuritiesandstudyoftheirelectricalproperties AT sakinhjabarov preparationofnsipgaseheterojunctionsbasedonanamorphousgaselayerwithoutimpuritiesandstudyoftheirelectricalproperties |