Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafer...

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Bibliographic Details
Main Authors: Marina Baryshnikova, Yves Mols, Yoshiyuki Ishii, Reynald Alcotte, Han Han, Thomas Hantschel, Olivier Richard, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout, Robert Langer, Bernardette Kunert
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Crystals
Subjects:
III-V on silicon
monolithic III-V integration
heteroepitaxy
infrared laser
MOVPE
InAs/GaSb heterostructure
Online Access:https://www.mdpi.com/2073-4352/10/4/330

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https://www.mdpi.com/2073-4352/10/4/330

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