Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and <sup>60</sup>Co gamma-ray irradiation. The results sh...

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Bibliographic Details
Main Authors: Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Nanomaterials
Subjects:
displacement damage effect
total ionizing dose effect
gamma-ray
neutron
gallium nitride high electron mobility transistor
Online Access:https://www.mdpi.com/2079-4991/12/13/2126

Internet

https://www.mdpi.com/2079-4991/12/13/2126

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