Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and <sup>60</sup>Co gamma-ray irradiation. The results sh...
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| Format: | Article |
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MDPI AG
2022-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/13/2126 |
| _version_ | 1797408526884143104 |
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| author | Rui Chen Yanan Liang Jianwei Han Qihong Lu Qian Chen Ziyu Wang Hao Wang Xuan Wang Runjie Yuan |
| author_facet | Rui Chen Yanan Liang Jianwei Han Qihong Lu Qian Chen Ziyu Wang Hao Wang Xuan Wang Runjie Yuan |
| author_sort | Rui Chen |
| collection | DOAJ |
| description | This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and <sup>60</sup>Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 10<sup>12</sup> n/cm<sup>2</sup> and 3 × 10<sup>12</sup> n/cm<sup>2</sup> exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer. |
| first_indexed | 2024-03-09T04:00:48Z |
| format | Article |
| id | doaj.art-c5c28360c0b7468e9f764e299e5eb179 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T04:00:48Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-c5c28360c0b7468e9f764e299e5eb1792023-12-03T14:14:28ZengMDPI AGNanomaterials2079-49912022-06-011213212610.3390/nano12132126Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray IrradiationRui Chen0Yanan Liang1Jianwei Han2Qihong Lu3Qian Chen4Ziyu Wang5Hao Wang6Xuan Wang7Runjie Yuan8National Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaNational Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaNational Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaSchool of Physical Science and Technology, Yangzhou University, Yangzhou 225000, ChinaNational Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaNational Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaNational Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaNational Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaNational Space Science Center, Chinese Academy of Sciences, Beijing 100190, ChinaThis paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and <sup>60</sup>Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 10<sup>12</sup> n/cm<sup>2</sup> and 3 × 10<sup>12</sup> n/cm<sup>2</sup> exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.https://www.mdpi.com/2079-4991/12/13/2126displacement damage effecttotal ionizing dose effectgamma-rayneutrongallium nitride high electron mobility transistor |
| spellingShingle | Rui Chen Yanan Liang Jianwei Han Qihong Lu Qian Chen Ziyu Wang Hao Wang Xuan Wang Runjie Yuan Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation Nanomaterials displacement damage effect total ionizing dose effect gamma-ray neutron gallium nitride high electron mobility transistor |
| title | Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation |
| title_full | Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation |
| title_fullStr | Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation |
| title_full_unstemmed | Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation |
| title_short | Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation |
| title_sort | research on the synergistic effect of total ionization and displacement dose in gan hemt using neutron and gamma ray irradiation |
| topic | displacement damage effect total ionizing dose effect gamma-ray neutron gallium nitride high electron mobility transistor |
| url | https://www.mdpi.com/2079-4991/12/13/2126 |
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