Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes
Abstract High-density interconnects, enabled by advanced CMOS Cu BEOL technologies, lead to closely placed metals layers. High-aspect ratio metal lines require extensive plasma etching processes, which may cause reliability concerns on inter metal dielectric (IMD) layers. This study presents newly p...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2020-05-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-020-03328-7 |
| _version_ | 1797762968949096448 |
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| author | Chi Su Yi-Pei Tsai Chrong-Jung Lin Ya-Chin King |
| author_facet | Chi Su Yi-Pei Tsai Chrong-Jung Lin Ya-Chin King |
| author_sort | Chi Su |
| collection | DOAJ |
| description | Abstract High-density interconnects, enabled by advanced CMOS Cu BEOL technologies, lead to closely placed metals layers. High-aspect ratio metal lines require extensive plasma etching processes, which may cause reliability concerns on inter metal dielectric (IMD) layers. This study presents newly proposed test patterns for evaluating the effect of plasma-induced charging effect on the integrity of IMD between closely placed metal lines. Strong correlations between the plasma charging intensities and damages found in IMD layers are found and analyzed comprehensively. |
| first_indexed | 2024-03-12T19:34:54Z |
| format | Article |
| id | doaj.art-c5f37579d9c740299df0877a13279660 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:34:54Z |
| publishDate | 2020-05-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-c5f37579d9c740299df0877a132796602023-08-02T04:15:00ZengSpringerOpenNanoscale Research Letters1556-276X2020-05-011511710.1186/s11671-020-03328-7Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL ProcessesChi Su0Yi-Pei Tsai1Chrong-Jung Lin2Ya-Chin King3Institute of Electronics Engineering, National Tsing Hua UniversityInstitute of Electronics Engineering, National Tsing Hua UniversityInstitute of Electronics Engineering, National Tsing Hua UniversityInstitute of Electronics Engineering, National Tsing Hua UniversityAbstract High-density interconnects, enabled by advanced CMOS Cu BEOL technologies, lead to closely placed metals layers. High-aspect ratio metal lines require extensive plasma etching processes, which may cause reliability concerns on inter metal dielectric (IMD) layers. This study presents newly proposed test patterns for evaluating the effect of plasma-induced charging effect on the integrity of IMD between closely placed metal lines. Strong correlations between the plasma charging intensities and damages found in IMD layers are found and analyzed comprehensively.http://link.springer.com/article/10.1186/s11671-020-03328-7Plasma-induced damageAdvanced FinFET technologyBack-end of lineInter-metal dielectric |
| spellingShingle | Chi Su Yi-Pei Tsai Chrong-Jung Lin Ya-Chin King Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes Nanoscale Research Letters Plasma-induced damage Advanced FinFET technology Back-end of line Inter-metal dielectric |
| title | Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes |
| title_full | Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes |
| title_fullStr | Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes |
| title_full_unstemmed | Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes |
| title_short | Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes |
| title_sort | test pattern design for plasma induced damage on inter metal dielectric in finfet cu beol processes |
| topic | Plasma-induced damage Advanced FinFET technology Back-end of line Inter-metal dielectric |
| url | http://link.springer.com/article/10.1186/s11671-020-03328-7 |
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