Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry

Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry

Thin films of silicon carbide possessing unique properties attract increasing attention of researchers both in the field of semiconductor physics and in the technology of new semiconductor devices for high power, RF and optoelectronics. The growth of the production of silicon carbide based devices p...

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Bibliographic Details
Main Authors: Alexander S. Gusev, Sergei M. Ryndya, Andrei V. Zenkevich, Nikolai I. Kargin, Dmitrii V. Averyanov, Maksim M. Grekhov
Format: Article
Language:English
Published: Pensoft Publishers 2015-12-01
Series:Modern Electronic Materials
Subjects:
Thin film
Silicon carbide
Pulsed laser deposition
Epitaxial films
Surface morphology
Online Access:http://www.sciencedirect.com/science/article/pii/S2452177916000128

Internet

http://www.sciencedirect.com/science/article/pii/S2452177916000128

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