Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry
Thin films of silicon carbide possessing unique properties attract increasing attention of researchers both in the field of semiconductor physics and in the technology of new semiconductor devices for high power, RF and optoelectronics. The growth of the production of silicon carbide based devices p...
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| Format: | Article |
| Language: | English |
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Pensoft Publishers
2015-12-01
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| Series: | Modern Electronic Materials |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916000128 |
| _version_ | 1797706813765844992 |
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| author | Alexander S. Gusev Sergei M. Ryndya Andrei V. Zenkevich Nikolai I. Kargin Dmitrii V. Averyanov Maksim M. Grekhov |
| author_facet | Alexander S. Gusev Sergei M. Ryndya Andrei V. Zenkevich Nikolai I. Kargin Dmitrii V. Averyanov Maksim M. Grekhov |
| author_sort | Alexander S. Gusev |
| collection | DOAJ |
| description | Thin films of silicon carbide possessing unique properties attract increasing attention of researchers both in the field of semiconductor physics and in the technology of new semiconductor devices for high power, RF and optoelectronics. The growth of the production of silicon carbide based devices promotes the search for more resource saving and safe SiC layer synthesis technologies. Potential method is pulse laser deposition (PLD) in vacuum. This technology does not require the use of chemically aggressive and explosive gases and allows forming thin and continuous coatings with thicknesses of from several nanometers at relatively low substrate temperatures. Submicron thickness silicon carbide films have been grown on single crystal silicon by vacuum laser ablation of a ceramic target. The physical and technological parameters of silicon carbide thin film low temperature synthesis by PLD have been studied and, in particular, the effect of temperature and substrate crystalline orientation on the composition, structural properties and morphology of the surface of the experimental specimens has been analyzed. At above 500 °C the crystalline β-SiC phase forms on Si (100) and (111). At a substrate temperature of 950 °C the formation of textured heteroepitaxial 3C–SiC films was observed. |
| first_indexed | 2024-03-12T05:57:56Z |
| format | Article |
| id | doaj.art-c5fb8921d7704cb4b204fb01fe2765fb |
| institution | Directory Open Access Journal |
| issn | 2452-1779 |
| language | English |
| last_indexed | 2024-03-12T05:57:56Z |
| publishDate | 2015-12-01 |
| publisher | Pensoft Publishers |
| record_format | Article |
| series | Modern Electronic Materials |
| spelling | doaj.art-c5fb8921d7704cb4b204fb01fe2765fb2023-09-03T04:28:35ZengPensoft PublishersModern Electronic Materials2452-17792015-12-011412012510.1016/j.moem.2016.03.005Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometryAlexander S. Gusev0Sergei M. Ryndya1Andrei V. Zenkevich2Nikolai I. Kargin3Dmitrii V. Averyanov4Maksim M. Grekhov5National Research Nuclear University «MEPhI», 31 Kashirskoe Highway, Moscow 115409, RussiaKarpov Institute of Physical Chemistry, 3-1/12, Building 6, Pereulok Obukha, Moscow 105064, RussiaNational Research Nuclear University «MEPhI», 31 Kashirskoe Highway, Moscow 115409, RussiaNational Research Nuclear University «MEPhI», 31 Kashirskoe Highway, Moscow 115409, RussiaNational Research Nuclear University «MEPhI», 31 Kashirskoe Highway, Moscow 115409, RussiaNational Research Nuclear University «MEPhI», 31 Kashirskoe Highway, Moscow 115409, RussiaThin films of silicon carbide possessing unique properties attract increasing attention of researchers both in the field of semiconductor physics and in the technology of new semiconductor devices for high power, RF and optoelectronics. The growth of the production of silicon carbide based devices promotes the search for more resource saving and safe SiC layer synthesis technologies. Potential method is pulse laser deposition (PLD) in vacuum. This technology does not require the use of chemically aggressive and explosive gases and allows forming thin and continuous coatings with thicknesses of from several nanometers at relatively low substrate temperatures. Submicron thickness silicon carbide films have been grown on single crystal silicon by vacuum laser ablation of a ceramic target. The physical and technological parameters of silicon carbide thin film low temperature synthesis by PLD have been studied and, in particular, the effect of temperature and substrate crystalline orientation on the composition, structural properties and morphology of the surface of the experimental specimens has been analyzed. At above 500 °C the crystalline β-SiC phase forms on Si (100) and (111). At a substrate temperature of 950 °C the formation of textured heteroepitaxial 3C–SiC films was observed.http://www.sciencedirect.com/science/article/pii/S2452177916000128Thin filmSilicon carbidePulsed laser depositionEpitaxial filmsSurface morphology |
| spellingShingle | Alexander S. Gusev Sergei M. Ryndya Andrei V. Zenkevich Nikolai I. Kargin Dmitrii V. Averyanov Maksim M. Grekhov Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry Modern Electronic Materials Thin film Silicon carbide Pulsed laser deposition Epitaxial films Surface morphology |
| title | Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry |
| title_full | Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry |
| title_fullStr | Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry |
| title_full_unstemmed | Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry |
| title_short | Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry |
| title_sort | research of morphology and structure of 3c sic thin films on silicon by electron microscopy and x ray diffractometry |
| topic | Thin film Silicon carbide Pulsed laser deposition Epitaxial films Surface morphology |
| url | http://www.sciencedirect.com/science/article/pii/S2452177916000128 |
| work_keys_str_mv | AT alexandersgusev researchofmorphologyandstructureof3csicthinfilmsonsiliconbyelectronmicroscopyandxraydiffractometry AT sergeimryndya researchofmorphologyandstructureof3csicthinfilmsonsiliconbyelectronmicroscopyandxraydiffractometry AT andreivzenkevich researchofmorphologyandstructureof3csicthinfilmsonsiliconbyelectronmicroscopyandxraydiffractometry AT nikolaiikargin researchofmorphologyandstructureof3csicthinfilmsonsiliconbyelectronmicroscopyandxraydiffractometry AT dmitriivaveryanov researchofmorphologyandstructureof3csicthinfilmsonsiliconbyelectronmicroscopyandxraydiffractometry AT maksimmgrekhov researchofmorphologyandstructureof3csicthinfilmsonsiliconbyelectronmicroscopyandxraydiffractometry |