Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry
Thin films of silicon carbide possessing unique properties attract increasing attention of researchers both in the field of semiconductor physics and in the technology of new semiconductor devices for high power, RF and optoelectronics. The growth of the production of silicon carbide based devices p...
Main Authors: | Alexander S. Gusev, Sergei M. Ryndya, Andrei V. Zenkevich, Nikolai I. Kargin, Dmitrii V. Averyanov, Maksim M. Grekhov |
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Format: | Article |
Language: | English |
Published: |
Pensoft Publishers
2015-12-01
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Series: | Modern Electronic Materials |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916000128 |
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