Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques
In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC materials. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy technique...
| Hauptverfasser: | , |
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| Format: | Artikel |
| Sprache: | English |
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MDPI AG
2022-03-01
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| Schriftenreihe: | Electronic Materials |
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| Online Zugang: | https://www.mdpi.com/2673-3978/3/1/11 |