Charge transport in semi insulating bulk 4H-Silicon carbide: Effect of metallization and wafer homogeneity
We investigated the effect of metallization and spatial homogeneity on the charge collection of sensors prepared from high purity semi-insulating 4H-SiC bulk wafer. We used Au, Ni, Cr or graphene electrical contacts subsequently prepared on the same chip. We also tested sensors prepared from differe...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2022-12-01
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Series: | Results in Physics |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379722007240 |