Charge transport in semi insulating bulk 4H-Silicon carbide: Effect of metallization and wafer homogeneity

Charge transport in semi insulating bulk 4H-Silicon carbide: Effect of metallization and wafer homogeneity

We investigated the effect of metallization and spatial homogeneity on the charge collection of sensors prepared from high purity semi-insulating 4H-SiC bulk wafer. We used Au, Ni, Cr or graphene electrical contacts subsequently prepared on the same chip. We also tested sensors prepared from differe...

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Bibliographic Details
Main Authors: P. Praus, M. Betušiak, E. Belas, J. Kunc, R. Grill, M. Brynza, J. Pipek
Format: Article
Language:English
Published: Elsevier 2022-12-01
Series:Results in Physics
Subjects:
4H-SiC
Time of Flight
Alpha spectroscopy
Metallization
Polarization effect
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379722007240

Internet

http://www.sciencedirect.com/science/article/pii/S2211379722007240

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