Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

Abstract A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P + anode electrode of RC-LIGBT and the other side is...

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Bibliographic Details
Main Authors: Kemeng Yang, Jie Wei, Kaiwei Dai, Zhen Ma, Congcong Li, Xiaorong Luo
Format: Article
Language:English
Published: SpringerOpen 2022-04-01
Series:Nanoscale Research Letters
Subjects:
Lateral insulated gate bipolar transistor (LIGBT)
Snapback effect
Reverse conducting
Area-efficient
Online Access:https://doi.org/10.1186/s11671-022-03685-5

Internet

https://doi.org/10.1186/s11671-022-03685-5

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