Photovoltaic field effect transistor (PVFET)-based Ge/Si photodetector for low-power silicon photonics

Photovoltaic field effect transistor (PVFET)-based Ge/Si photodetector for low-power silicon photonics

We propose a Ge/Si photodetector based upon photovoltaic field effect transistor (PVFET) for low-power silicon photonics. The device realizes detection by modulating the conductivity of the FET channel through photo-induced gate voltage, exhibiting ultra-high responsivity. The responsivity can reach...

詳細記述

書誌詳細
主要な著者: Q. Y. Zeng, Z. X. Pan, Z. H. Zeng, J. C. Liu, X. Y. Liu, Z. T. Chen, Z. Gong
フォーマット: 論文
言語:English
出版事項: AIP Publishing LLC 2019-08-01
シリーズ:AIP Advances
オンライン･アクセス:http://dx.doi.org/10.1063/1.5100039

インターネット

http://dx.doi.org/10.1063/1.5100039

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