Fundamental Modeling of the Switching Transition in High-Speed Power Electronics

Recent advances in semiconductor technology have paved the way for ultra-fast switching capabilities. This increase in switching speed enhances efficiency, power density, and frequency but also increases overvoltage oscillations at the switching node. Existing methods that effectively suppress this...

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Bibliographic Details
Main Authors: Francois P. Du Toit, Ivan W. Hofsajer
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10464293/