Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Abstract Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the formation of smaller crystallites (~9.7 ...

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Bibliographic Details
Main Authors: Hae Won Cho, Pavan Pujar, Minsu Choi, Seunghun Kang, Seongin Hong, Junwoo Park, Seungho Baek, Yunseok Kim, Jaichan Lee, Sunkook Kim
Format: Article
Language:English
Published: Nature Portfolio 2021-04-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-021-00229-w

Internet

https://doi.org/10.1038/s41699-021-00229-w

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