Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting

Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting

Nanosecond pulsed laser melting can be used to rapidly recrystallize ion-implanted Si through liquid phase epitaxy. The rapid resolidification that follows the melting results in a supersaturation of impurities and hyperdopes the Si, inducing novel optoelectronic properties with a wide range of appl...

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Bibliographic Details
Main Authors: W. Yang, N. Ferdous, P. J. Simpson, J. M. Gaudet, Q. Hudspeth, P. K. Chow, J. M. Warrender, A. J. Akey, M. J. Aziz, E. Ertekin, J. S. Williams
Format: Article
Language:English
Published: AIP Publishing LLC 2019-10-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5124709

Internet

http://dx.doi.org/10.1063/1.5124709

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